Sense/Drive Architecture for CMOS-MEMS Accelerometers with Relaxation Oscillator and TDC

Postprint (published version

CMOS-MEMS resonant pressure sensors: optimization and validation through comparative analysis

The final publication is available at Springer via http://dx.doi.org/10.1007/s00542-016-2878-3An optimized CMOS-MEMS resonant pressure sensor with enhanced sensitivity at atmospheric pressure has been reported in this paper. The presented work reports modeling and characterization of a resonant pressure sensor, based on the variation of the quality factor with pressure. The relevant regimes of air flow have been determined by the Knudsen number, which is the ratio of the mean free path of the gas molecule to the characteristic length of the device. The sensitivity has been monitored for the resonator design from low vacuum to atmospheric levels of air pressure. This has been accomplished by reducing the characteristic length and optimization of other parameters for the device. While the existing analytical model has been adapted to simulate the squeeze film damping effectively and it is validated at higher values of air pressure, it fails to compute the structural damping mechanisms dominant in the molecular flow regime, i.e. at lower levels of air pressure. This discrepancy has been solved by finite element modeling that has incorporated both structural and film damping effects. The sensor has been designed with an optimal geometry of 140 × 140 × 8 µm having 6 × 6 perforations along the row and column of the plate, respectively, for maximum Q, with an effective mass of 0.4 µg. An enhanced quality factor of 60 and reduced damping coefficient of 4.34 µNs/m have been obtained for the reported device at atmospheric pressure. The sensitivity of the manufactured device is approximately -0.09 at atmospheric pressure and increases to -0.3 at 40 kPa i.e. in the lower pressures of slip flow regime. The experimental measurements of the manufactured resonant pressure sensor have been compared with that of the analytical and finite element modeling to validate the optimization procedure. The device has been manufactured using standard 250 nm CMOS technology followed by an in-house BEOL metal-layer release through wet etching.Peer ReviewedPostprint (author's final draft

Nuclear electromagnetic pulse

SIGLEAvailable from British Library Document Supply Centre- DSC:q93/10293(Nuclear) / BLDSC - British Library Document Supply CentreGBUnited Kingdo

Experiments on MEMS Integration in 0.25 turn CMOS Process

In this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology. The experimental prototyping process is illustrated with examples of three CMOS-MEMS chips and starts from rough process exploration and characterization, followed by the definition of the useful MEMS design space to finally reach CMOS-MEMS devices with inertial mass up to 4.3 µg and resonance frequency down to 4.35 kHz. Furthermore, the presented design techniques help to avoid several structural and reliability issues such as layer delamination, device stiction, passivation fracture or device cracking due to stress.Peer ReviewedPostprint (published version

CMOS BEOL-embedded z-axis accelerometer

A first reported complementary metal-oxide semiconductor (CMOS)-integrated acceleration sensor obtained through isotropic inter-metal dielectric (IMD) etching of a back-end-of-line (BEOL) integrated circuit interconnection stack, without any additional substrate etching steps, is presented. The mechanical device composed of a CMOS-process 8 mu m-thick metal-via-metal stack of 135 mu m diameter and suspended 2.5 mu m over a bottom fixed electrode, has a resonance frequency of 20 kHz, a sensing capacitance of 50 fF with sensitivity 14 aF/G and it is integrated on the same substrate with a simple low-noise amplifier reaching 25 mG of RMS noise measured from 0.25 to 100 Hz bandwidth

Experiments on MEMS Integration in 0.25 turn CMOS Process

In this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology. The experimental prototyping process is illustrated with examples of three CMOS-MEMS chips and starts from rough process exploration and characterization, followed by the definition of the useful MEMS design space to finally reach CMOS-MEMS devices with inertial mass up to 4.3 µg and resonance frequency down to 4.35 kHz. Furthermore, the presented design techniques help to avoid several structural and reliability issues such as layer delamination, device stiction, passivation fracture or device cracking due to stress.Peer Reviewe

CMOS-MEMS resonant pressure sensors: optimization and validation through comparative analysis

The final publication is available at Springer via http://dx.doi.org/10.1007/s00542-016-2878-3An optimized CMOS-MEMS resonant pressure sensor with enhanced sensitivity at atmospheric pressure has been reported in this paper. The presented work reports modeling and characterization of a resonant pressure sensor, based on the variation of the quality factor with pressure. The relevant regimes of air flow have been determined by the Knudsen number, which is the ratio of the mean free path of the gas molecule to the characteristic length of the device. The sensitivity has been monitored for the resonator design from low vacuum to atmospheric levels of air pressure. This has been accomplished by reducing the characteristic length and optimization of other parameters for the device. While the existing analytical model has been adapted to simulate the squeeze film damping effectively and it is validated at higher values of air pressure, it fails to compute the structural damping mechanisms dominant in the molecular flow regime, i.e. at lower levels of air pressure. This discrepancy has been solved by finite element modeling that has incorporated both structural and film damping effects. The sensor has been designed with an optimal geometry of 140 × 140 × 8 µm having 6 × 6 perforations along the row and column of the plate, respectively, for maximum Q, with an effective mass of 0.4 µg. An enhanced quality factor of 60 and reduced damping coefficient of 4.34 µNs/m have been obtained for the reported device at atmospheric pressure. The sensitivity of the manufactured device is approximately -0.09 at atmospheric pressure and increases to -0.3 at 40 kPa i.e. in the lower pressures of slip flow regime. The experimental measurements of the manufactured resonant pressure sensor have been compared with that of the analytical and finite element modeling to validate the optimization procedure. The device has been manufactured using standard 250 nm CMOS technology followed by an in-house BEOL metal-layer release through wet etching.Peer Reviewe

Analysis of Outcomes in Ischemic vs Nonischemic Cardiomyopathy in Patients With Atrial Fibrillation A Report From the GARFIELD-AF Registry

IMPORTANCE Congestive heart failure (CHF) is commonly associated with nonvalvular atrial fibrillation (AF), and their combination may affect treatment strategies and outcomes